This report studies the global GaN Power Devices market status and forecast, categorizes the global GaN Power Devices market size (value & volume) by manufacturers, type, application, and region. This report focuses on the top manufacturers in North America, Europe, Japan, China, India, Southeast Asia and other regions (Central & South America, and Middle East & Africa).
GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.
The global GaN Power Devices market is valued at xx million US$ in 2017 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2018-2025.
The major manufacturers covered in this report
NTT Advanced Technology
RF Micro Devices
International Quantum Epitaxy (IQE)
Geographically, this report studies the top producers and consumers, focuses on product capacity, production, value, consumption, market share and growth opportunity in these key regions, covering
Other regions (Central & South America, Middle East & Africa)
We can also provide the customized separate regional or country-level reports, for the following regions:
Rest of Asia-Pacific
Rest of Europe
Central & South America
Rest of South America
Middle East & Africa
Rest of Middle East & Africa
On the basis of product, this report displays the production, revenue, price, market share and growth rate of each type, primarily split into
By Application, the market can be split into
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices
The study objectives of this report are:
To analyze and study the global GaN Power Devices capacity, production, value, consumption, status (2013-2017) and forecast (2018-2025);
Focuses on the key GaN Power Devices manufacturers, to study the capacity, production, value, market share and development plans in future.
Focuses on the global key manufacturers, to define, describe and analyze the market competition landscape, SWOT analysis.
To define, describe and forecast the market by type, application and region.
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends and factors driving or inhibiting the market growth.
To analyze the opportunities in the market for stakeholders by identifying the high growth segments.
To strategically analyze each submarket with respect to individual growth trend and their contribution to the market.
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
To strategically profile the key players and comprehensively analyze their growth strategies.
In this study, the years considered to estimate the market size of GaN Power Devices are as follows:
History Year: 2013-2017
Base Year: 2017
Estimated Year: 2018
Forecast Year 2018 to 2025
For the data information by region, company, type and application, 2017 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.
GaN Power Devices Manufacturers
GaN Power Devices Distributors/Traders/Wholesalers
GaN Power Devices Subcomponent Manufacturers
With the given market data, QYResearch offers customizations according to the company's specific needs. The following customization options are available for the report:
Regional and country-level analysis of the GaN Power Devices market, by end-use.
Detailed analysis and profiles of additional market players.